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INTEGRATED CIRCUITS
DATA SHEET
UAA3592 Wideband code division multiple access frequency division duplex power amplifier
Objective specification 2002 Jul 02
Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
FEATURES * 3.6 V nominal supply voltage * 24 dBm average output power * 0 dBm input power * Wide operating temperature range from -30 to +70 C * HVQFN16 package. APPLICATIONS * WCDMA-FDD applications. QUICK REFERENCE DATA Tamb = 25 C; VC1 = 3.6 V; Vreg = 2.7 V. SYMBOL VC1 Po(max) Tamb positive supply voltage maximum output power efficiency at maximum power ambient temperature PARAMETER MIN. - - - -30 TYP. 3.6 24.5 35 - GENERAL DESCRIPTION
UAA3592
The UAA3592 is a Wideband Code Division Multiple Access (WCDMA) silicon bipolar transistor Monolithic Microwave Integrated Circuit (MMIC) Power Amplifier (PA). The circuit is specially designed to operate at a nominal 3.6 V battery supply voltage. It includes a current saving architecture at low output power levels.
MAX. - - - +70
UNIT V dBm % C
ORDERING INFORMATION TYPE NUMBER UAA3592HN PACKAGE NAME HVQFN16 DESCRIPTION plastic, heatsink very thin quad flat package; no leads; 16 terminals; body 4 x 4 x 0.85 mm VERSION SOT629-1
2002 Jul 02
2
Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
BLOCK DIAGRAM
UAA3592
VC1 6,7
FRX 8
UAA3592HN
RFI 3 10,11 RFO
Rext
16
BIAS CONTROL POWER DETECTOR
ICTL EN
2 1 (1) GND 15 Vreg 4, 5 9, 12, 13 14
FCA234
n.c.
Vdetect
Die pad must be connected to ground.
Fig.1 Block diagram.
2002 Jul 02
3
Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
PINNING SYMBOL EN ICTL RFI n.c. n.c. VC1 VC1 FRX n.c. RFO RFO n.c. n.c. Vdetect Vreg Rext PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 die pad enable input current control input power amplifier input not connected not connected supply voltage for the first stage collector supply voltage for the first stage collector RX filter not connected power amplifier output power amplifier output not connected not connected power detection regulated supply voltage connection to external resistor ground DESCRIPTION
UAA3592
6
5
7
n.c. RFI ICTL EN
4 3
8
FRX
VC1
VC1
n.c.
9
n.c.
10 RFO
UAA3592HN
2 1 11 RFO 12 n.c.
Vdetect 14
Rext 16
Vreg 15
n.c. 13
FCA235
Fig.2 Pin configuration (bottom view).
2002 Jul 02
4
Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
FUNCTIONAL DESCRIPTION Operating conditions
UAA3592
The UAA3592 is designed to meet the "Third Generation Partnership Project (3GPP) specification" for the Universal Mobile Telecommunication System (UMTS) standard. Power amplifier The device is intended for WCDMA power amplification. The control signals select the bias current as given in Table 1. Table 1 Current control ICTL 0 1 0 1 off off nominal bias current bias current is reduced by 50% on the second stage DESCRIPTION
EN 0 0 1 1
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VC1 Vreg Tj(max) Ptot Pi Tstg Note 1. On Philips evaluation board. HANDLING Do not operate or store near strong electrostatic fields. Mets class 1 ESD test requirements (Human Body Model - HBM), in accordance with "EIA/JESD22-A114-A (October 1997)" and class A ESD test requirements (Machine Model - MM), in accordance with "EIA/JESD22-A115.-A (October 1997)". THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. On Philips evaluation board. PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE tbf UNIT K/W PARAMETER supply voltage for the first stage collector regulated voltage maximum operating junction temperature total power dissipation input power storage temperature note 1 CONDITIONS - - - - - -55 MIN. MAX. 5.5 3.3 150 tbf 10 +150 V V C mW dBm C UNIT
2002 Jul 02
5
Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
DC CHARACTERISTICS VC1 = 3.6 V; Vreg = 2.7 V; Tamb = 25 C; unless otherwise specified. SYMBOL VC1 Vreg IC1(q) Ileak VIL VIH PARAMETER supply voltage for the first stage collector regulated supply voltage quiescent supply current leakage current pin ICTL is LOW pin ICTL is HIGH VC1 = 4.5 V; pin EN is LOW CONDITIONS MIN. 3.25 2.6 - - - - 1.5 TYP. 3.6 2.7 - - - - -
UAA3592
MAX. 4.5 3 50 25 5 V V
UNIT
mA mA A V V
Inputs EN and ICTL LOW-level input voltage HIGH-level input voltage 1.1 -
AC CHARACTERISTICS VC1 = 3.6 V; Vreg = 2.7 V; Tamb = 25 C; fRF = 1920 to 1980 MHz; Pi adjusted for Po = 24.5 dBm; Rext = 2.2 k; measured and guaranteed on Philips evaluation board; unless otherwise specified. SYMBOL Pi Po(max) No(RX) H2 H3 CPR(adj) CPR(alt) RLi G(ripple) G PARAMETER input power CONDITIONS Tamb = -30 to +70 C MIN. -6 22.5 30 at 190 MHz offset; fRF = 2110 to 2170 MHz - - - - - - - - - - - - - - TYP. 0 - - -135 -40 -45 -37 -47 -6 0.5 tbf MAX. UNIT dBm dBm % dBm/Hz dBc dBc dBc dBc dB dB dB
maximum output power Tamb = -30 to +70 C; VC1 = 3.25 V efficiency output noise in RX band second-harmonic level third-harmonic level
adjacent channel power B = 3.84 MHz; at 5 MHz from - ratio carrier frequency first alternate channel power ratio input return loss ripple gain gain variation B = 3.84 MHz; at 10 MHz from carrier frequency Tamb = -30 to +70 C; fRF = 1.5 to 2.5 GHz fRF = 5 MHz; fRF = 1920 to 1980 MHz Po up to 24.5 dBm; pin ICTL is LOW - - - -
2002 Jul 02
6
Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
PACKAGE OUTLINE HVQFN16: plastic thermal enhanced very thin quad flat package; no leads; 16 terminals; body 4 x 4 x 0.85 mm
UAA3592
SOT629-1
D
B
A
terminal 1 index area E
AA 1 c
detail X
e1
1/2 e
C b 8 vMCAB wMC y1 C y
e 5 L
4
9 e
Eh
1/2 e
e2
1 terminal 1 index area 16 Dh 0 DIMENSIONS (mm are the original dimensions) UNIT mm Note A(1) max. 1 A1 0.05 0.00 b 0.40 0.23 c 0.2 D (1) 4.05 3.95 Dh 2.25 1.95 E (1) 4.05 3.95 Eh 2.25 1.95 13
12
X 2.5 scale 5 mm
e 0.65
e1 1.95
e2 1.95
L 0.75 0.35
v 0.1
w 0.05
y 0.05
y1 0.1
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINE VERSION SOT629-1 REFERENCES IEC --JEDEC MO-220 JEITA --EUROPEAN PROJECTION ISSUE DATE 01-06-28 01-08-08
2002 Jul 02
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Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 220 C for thick/large packages, and below 235 C for small/thin packages. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results:
UAA3592
* Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
2002 Jul 02
8
Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
Suitability of surface mount IC packages for wave and reflow soldering methods
UAA3592
SOLDERING METHOD PACKAGE WAVE BGA, HBGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. not suitable not not not suitable(2) recommended(3)(4) recommended(5) suitable REFLOW(1) suitable suitable suitable suitable suitable
2002 Jul 02
9
Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
UAA3592
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Jul 02
10
Philips Semiconductors
Objective specification
Wideband code division multiple access frequency division duplex power amplifier
NOTES
UAA3592
2002 Jul 02
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403506/01/pp12
Date of release: 2002
Jul 02
Document order number:
9397 750 09326

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